Sep 10, 2018 - 70 New Models Of Buku Persamaan Ic Dan Transistor – Welcome to our blog, with this occasion Please allow me to provide you with in relation. Terminal monolithic IC: power MOSFET, PWM controller, high. Capability in a given application depends on thermal environment, transformer design, efficiency required, minimum spec. 97 Data Book and Design Guide or on our Web site.

FGPF4536 IGBT. Datasheet pdf. Equivalent Type Designator: FGPF4536 Type of IGBT Channel: N-Channel Maximum Collector-Emitter Voltage Vce , V: 360V Collector-Emitter saturation Voltage Vcesat , V: 1.59V Maximum Collector Current Ic , A: 50.0A Package: TO220F - IGBT Cross-Reference Search FGPF4536 Datasheet (PDF) 1.1. Size:713K _fairchild_semi August 2010 FGPF4536 360V, PDP IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of • Low saturation voltage: VCE (sat) =1.59 V @ IC = 50 A trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are • High input impedance essential. • Fast switching • RoHS compliant A 3.1.

Size:313K _fairchild_semi August 2010 FGPF4533 330V, PDP IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applica- • Low saturation voltage: VCE (sat) =1.55 V @ IC = 50 A tions where low conduction and switching losses are essential. • High input impedance • Fast switching • RoHS compliant 5.1.

Size:419K _fairchild_semi August 2010 FGPF4633 330V PDP IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applica- • Low saturation voltage: VCE(sat) = 1.55 V @ IC = 70A tions where low conduction and switching losses are essential. • High input impedance • Fast switching • RoHS compliant Datasheet:,,,,,,,,,,,,,,,,.