Cmos Vlsi Vtu Notes Cbcs

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VTU exam syllabus of VLSI Design for Electronics and Communication Engineering Sixth Semester 2015 scheme. VTU CBCS 15EC63 Syllabus. CMOS Fabrication [P. Vlsi design notes(1st unit) according to vtu syllabus.(BE) 1. 1 VLSI Design UNIT -1 Introduction to MOS technology Moore’s law Speed- power performance nMos fabrication CMOS fabrication n-well process p-well process BiCMOS Comparison of bipolar and CMOS 2. Discipline

VLSI design Book Latest Material Links Unit 1 Link – Unit 2 Link – Unit 3 Link – Unit 2 Notes(Will be updated soon) Unit 4 Link – Unit 5 Link – Unit 6 Link – Old Material Links UNIT I INTRODUCTION Introduction to IC Technology – MOS, PMOS, NMOS, CMOS & BiCMOS,technologies- Oxidation, Lithography, Diffusion, Ion implantation, Metallisation, Encapsulation, Probe testing, Integrated Resistors and Capacitors,CMOS nanotechnology. Vlsi_lec-design VLSI-lec-1 UNIT II BASIC ELECTRICAL PROPERTIES Basic Electrical Properties of MOS and BiCMOS Circuits: Ids-Vds relationships, MOS transistor threshold Voltage, gm, gds, the figure of merit Co; Pass transistor, NMOS Inverter, Various pull-ups, CMOS Inverter analysis, and design, Bi-CMOS Inverters.

Vlsi design notes(1st unit) according to vtu syllabus.(BE) • 1. 1 VLSI Design UNIT -1 Introduction to MOS technology  Moore’s law  Speed- power performance  nMos fabrication  CMOS fabrication  n-well process  p-well process  BiCMOS  Comparison of bipolar and CMOS • 2 1 INTRODUCTION  Integrated circuit (IC):- an IC is a combination of interconnection circuit elements on a continuous substrate.  Substrate:- substrate is a supporting material upon which an IC is fabricated.  Wafer:- a wafer is a basic physical unit used in processing. It usually contains large number of identical IC’s.

 Transistor was invented in 1947.  The very first IC emerged at the beginning of 1960.

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